More than Moore Technologies for Next Generation Computer Design by Rasit O. Topaloglu

Author:Rasit O. Topaloglu
Language: eng
Format: epub
Publisher: Springer New York, New York, NY

Here X denotes the corner of A, when A is small/large, the switching of MTJ is fast(F)/slow(S). Similarly, Y denotes the corner of l m , when l m is thin/thick, switching is fast(F)/slow(S). The mean curve indicates the switching performance of fixed MTJ. Along the discussions in Sect. 5.3.2, a smaller MTJ cell with thinner free layer (FF corner) has the fastest switching time.

The switching time of a MTJ is also determined by the MTJ write current: when other device parameters remain constant, increasing the write current results in a reduced switching time. On the other hand, the magnitude of MTJ write current is determined by the NMOS transistor driving ability, which is mainly decided by the transistor size.

Our compact MTJ switching model can also be used to determine MTJ switching current once the required switching performance and the MTJ device parameters such as magnetization saturation, uniaxial anisotropy, free layer volume etc. are decided. After determining the switching current, the required size of the NMOS transistor can be obtained by using Table 5.5 [4]. Table 5.5MTJ write current and standard deviation under process variation

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